Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN

Citation
M. Wraback et al., Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN, APPL PHYS L, 79(9), 2001, pp. 1303-1305
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1303 - 1305
Database
ISI
SICI code
0003-6951(20010827)79:9<1303:TEMOTT>2.0.ZU;2-A
Abstract
A femtosecond time-resolved electroabsorption technique employing an AlGaN/ GaN heterojunction p-i-n diode with a p-type AlGaN window layer and a semit ransparent p contact has been used to measure the transient electron veloci ty overshoot in GaN. A peak transient electron velocity of 7.25x10(7) cm/s within the first 200 fs after photoexcitation has been observed at a field of 320 kV/cm. The increase in electron transit time across the device with increasing field beyond 320 kV/cm provides experimental evidence for a nega tive differential resistivity region of the steady-state velocity-field cha racteristic in this high field range. (C) 2001 American Institute of Physic s.