Strain effects on exciton resonance energies of ZnO epitaxial layers

Citation
T. Makino et al., Strain effects on exciton resonance energies of ZnO epitaxial layers, APPL PHYS L, 79(9), 2001, pp. 1282-1284
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1282 - 1284
Database
ISI
SICI code
0003-6951(20010827)79:9<1282:SEOERE>2.0.ZU;2-R
Abstract
Magnitudes of strain in ZnO epitaxial layers grown on sapphire(0001) substr ates under various growth conditions were experimentally determined by x-ra y diffraction. We discuss the strain-induced energy shift on the exciton re sonances, the results of which were analyzed theoretically using the Hamilt onian for the valence bands under in-plain biaxial strain. Comparative stud ies with GaN evidenced the advantages of ZnO in terms of sensitivity of the strain-induced energy shift and of piezoelectric effect in heterostructure s. (C) 2001 American Institute of Physics.