Inter-conduction band electron relaxation dynamics in 6H-SiC

Citation
T. Tomita et al., Inter-conduction band electron relaxation dynamics in 6H-SiC, APPL PHYS L, 79(9), 2001, pp. 1279-1281
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1279 - 1281
Database
ISI
SICI code
0003-6951(20010827)79:9<1279:IBERDI>2.0.ZU;2-F
Abstract
The ultrafast inter-conduction band carrier dynamics in 6H-SiC was observed by using pump and probe transient absorption technique. Probe wavelength d ependence of the bleaching was compared with the steady-state absorption pr ofiles for polarizations parallel and perpendicular to the c axis, and thes e bleachings were ascribed to the decrease of electron populations in the l owest conduction band. The relaxation time from the higher to the lowest co nduction band due to the inter-conduction band electron-phonon scattering i s 1.25 ps. (C) 2001 American Institute of Physics.