Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

Citation
Vc. Venezia et al., Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon, APPL PHYS L, 79(9), 2001, pp. 1273-1275
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1273 - 1275
Database
ISI
SICI code
0003-6951(20010827)79:9<1273:BEOVCG>2.0.ZU;2-4
Abstract
We have measured the evolution of the excess-vacancy region created by a 2 MeV, 10(16)/cm(2) Si implant in the silicon surface layer of silicon-on-ins ulator substrates. Free vacancy supersaturations were measured with Sb dopa nt diffusion markers during postimplant annealing at 700, 800, and 900 degr eesC, while vacancy clusters were detected by Au labeling. We demonstrate t hat a large free vacancy supersaturation exists for short times, during the very early stages of annealing between the surface and the buried oxide (1 mum below). Afterwards, the free vacancy concentration returns to equilibr ium in the presence of vacancy clusters. These vacancy clusters form at low temperatures and are stable to high temperatures, i.e., they have a low fo rmation energy and high binding energy. (C) 2001 American Institute of Phys ics.