Selective area metalorganic vapor phase epitaxy of thick crack-free GaN films on trenched SiC substrates

Citation
T. Akasaka et al., Selective area metalorganic vapor phase epitaxy of thick crack-free GaN films on trenched SiC substrates, APPL PHYS L, 79(9), 2001, pp. 1261-1263
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1261 - 1263
Database
ISI
SICI code
0003-6951(20010827)79:9<1261:SAMVPE>2.0.ZU;2-#
Abstract
Crack-free GaN films up to 11-mum-thick have been grown by using trenched S iC substrates and selective area metalorganic vapor phase epitaxy. These cr ack-free GaN films have hexagonal shapes and are surrounded by trenches. 97 % of the hexagonal GaN films with side lengths of 100 mum and thickness of 11 mum was crack-free. The GaN films do not crack because the lateral propa gation of cracks stops at the trenches and strain is relaxed in the small-a rea hexagonal GaN. This strain relaxation is confirmed by micro-Raman scatt ering measurements and agrees well with theoretical predictions. (C) 2001 A merican Institute of Physics.