Annealing effects on the microstructure of Ge/Si(001) quantum dots

Citation
Xz. Liao et al., Annealing effects on the microstructure of Ge/Si(001) quantum dots, APPL PHYS L, 79(9), 2001, pp. 1258-1260
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1258 - 1260
Database
ISI
SICI code
0003-6951(20010827)79:9<1258:AEOTMO>2.0.ZU;2-F
Abstract
Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 degreesC were investigated using energy-filtering transmission elec tron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase o f Ge concentration within islands in upper layers. As a result of the incre asing island size and Ge concentration within the islands, the island densi ty in upper layers decreases. For samples annealed at 900 degreesC for 5 mi n, the aspect ratio of buried islands increases significantly, and the aver age Ge concentration within islands of different layers becomes uniform. (C ) 2001 American Institute of Physics.