Optical gain in Si/SiO2 lattice: Experimental evidence with nanosecond pulses

Citation
L. Khriachtchev et al., Optical gain in Si/SiO2 lattice: Experimental evidence with nanosecond pulses, APPL PHYS L, 79(9), 2001, pp. 1249-1251
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1249 - 1251
Database
ISI
SICI code
0003-6951(20010827)79:9<1249:OGISLE>2.0.ZU;2-0
Abstract
Experimental evidence of population inversion and amplified spontaneous emi ssion was found for Si nanocrystallites embedded in SiO2 surrounding under pumping with 5 ns light pulses at 380, 400, and 500 nm. As an important pro perty, our experiments show a short lifetime of the population inversion al lowing a generation of short (a few nanosecond) amplified light pulses in t he Si/SiO2 lattice. The estimate for optical gain in the present samples is 6 cm(-1) at 720 nm. (C) 2001 American Institute of Physics.