Electrical resistivity for Bi2Sr1.6La0.4CuO6+delta in magnetic field and under quasi-hydro static pressure

Citation
T. Akazawa et al., Electrical resistivity for Bi2Sr1.6La0.4CuO6+delta in magnetic field and under quasi-hydro static pressure, PHYSICA C, 357, 2001, pp. 162-165
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
0921-4534 → ACNP
Volume
357
Year of publication
2001
Part
1
Pages
162 - 165
Database
ISI
SICI code
0921-4534(200108)357:<162:ERFBIM>2.0.ZU;2-M
Abstract
We have measured electrical resistivity in a magnetic field and under quasi -hydro static pressure for single crystalline Bi2Sr1.6La0.4CuO6+delta in th e underdoped region. Temperature dependence of out-of-plane and in-plane el ectrical resistivity indicates that applying pressure increases carrier con centration in Bi2Sr1.6La0.4Cu6+delta Moreover, we have observed that the ma gnitude of the negative out-of-plane magnetoresistance decreases with incre asing pressure. This result suggests that applied pressure also enhances ch arge confinement in a CuO2 plane. (C) 2001 Elsevier Science B.V. All rights reserved.