Characterization of YBa2Cu3O7-delta films grown on NiO buffer layer by liquid-phase epitaxy process

Citation
T. Maeda et al., Characterization of YBa2Cu3O7-delta films grown on NiO buffer layer by liquid-phase epitaxy process, PHYSICA C, 357, 2001, pp. 1042-1045
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
0921-4534 → ACNP
Volume
357
Year of publication
2001
Part
2
Pages
1042 - 1045
Database
ISI
SICI code
0921-4534(200108)357:<1042:COYFGO>2.0.ZU;2-3
Abstract
By means of a liquid-phase epitaxy (LPE) process, superconducting YBa2Cu3O7 -delta (YBCO) thick film is grown on a biaxially textured NiO buffer layer which is pulsed-laser deposited on a (0 0 1) surface of SrTiO3 single cryst al. Employment of BaF2-added Ba-Cu-O flux is found to be effective for LPE- YBCO growth because the growth temperature of YBCO is drastically lowered d own to 900-920 degreesC compared to the case of usually used simple Ba-Cu-O flux. This strongly suggests that the low-temperature LPE growth of YBCO o n a NiO/Ni substrate is hopeful process for coated-conductor production. Su perconductivity transition temperature (T-c) of the LPE-YBCO film is measur ed to be 91 K for onset and 87 K for a zero-resistance state. (C) 2001 Else vier Science B.V. All rights reserved.