Microstructure control of copper films by the addition of molybdenum in anadvanced metallization process

Citation
Wh. Lee et al., Microstructure control of copper films by the addition of molybdenum in anadvanced metallization process, J ELEC MAT, 30(8), 2001, pp. 1042-1048
Citations number
27
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
0361-5235 → ACNP
Volume
30
Issue
8
Year of publication
2001
Pages
1042 - 1048
Database
ISI
SICI code
0361-5235(200108)30:8<1042:MCOCFB>2.0.ZU;2-9
Abstract
The effect of annealing on the resistivity, morphology, microstructure, and diffusion characteristics of Cu(Mo)/SiO2/Si and Ti/Cu(Mo)/SiO2/Si multilay er films has been investigated in order to determine the role of Mo. In the case of a Cu(Mo)/SiO2/Si multilayer, most of the Mo diffused out to the fr ee surface to form MoO3 at temperatures up to 500 degreesC, and complete di ssociation of Mo occurred at higher temperatures. The segregation of Mo to the external surface leads to Mo-free Cu films with extensive grain growth up to 20 times the original grain size and strong (111) texture. In the cas e of a Ti/Cu(Mo)/SiO2/Si multilayer, a thin Ti film prohibits Cu agglomerat ion, out-diffusion of Mo, and diffusion of Cu into SiO2 at temperatures up to 750 degreesC. Cu(Mo) grain growth was less extensive, but (111) fiber te xturing was much stronger than in the case of Cu(Mo)/SiO2/Si. In the curren t study, significant changes in microstructure, such as a strong (111) text ure and abnormal grain growth, have been obtained by adding Mo to Cu films when the films are annealed.