The effect of carrier gas and H(hfac) on MOCVD Cu films using (hfac)Cu(1,5-COD) as a precursor

Citation
Wh. Lee et al., The effect of carrier gas and H(hfac) on MOCVD Cu films using (hfac)Cu(1,5-COD) as a precursor, J ELEC MAT, 30(8), 2001, pp. 1028-1034
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
0361-5235 → ACNP
Volume
30
Issue
8
Year of publication
2001
Pages
1028 - 1034
Database
ISI
SICI code
0361-5235(200108)30:8<1028:TEOCGA>2.0.ZU;2-Z
Abstract
The deposition characteristics of metalorganic chemical vapor deposition (M OCVD) Cu using (hfac)Cu(1,5-COD)(1,1,1,5,5,5-hexafluro-2,4pentadinato Cu(I) 1,5-cyclooctadiene) as a precursor have been investigated in terms of carr ier gas effects and adding H(hfac) to the carrier gas stream. Using hydroge n carrier gas led to a higher MOCVD Cu deposition rate and a lower film res istivity compared to an argon carrier gas system. Improvements in surface r oughness of the MOCVD Cu films and a (111) preferred orientation texture we re obtained by using hydrogen as a carrier gas. When a ligand such as H(hfa c) was added to Ar carrier gas, the deposition rate was significantly enhan ced. Moreover, H(hfac) added to both carrier gas streams led to lower MOCVD Cu film resistivity. However, film adhesion was somewhat weak compared to that observed with the Ar or H-2 carrier gas system, probably due to the la rger F content near the interface between the copper and the titanium-nitri de film. In conclusion, smooth Cu films with a low resistivity can be obtai ned by manipulating the deposition conditions, such as carrier gas type and ligand addition. The deposition mechanism of MOCVD Cu is also discussed in the paper.