Electrodeposition of ZnO on ITO electrode by potential modulation method

Authors
Citation
J. Lee et Y. Tak, Electrodeposition of ZnO on ITO electrode by potential modulation method, EL SOLID ST, 4(9), 2001, pp. C63-C65
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
1099-0062 → ACNP
Volume
4
Issue
9
Year of publication
2001
Pages
C63 - C65
Database
ISI
SICI code
1099-0062(200109)4:9<C63:EOZOIE>2.0.ZU;2-Y
Abstract
We report the effect of the concentration of hydroxide ion adsorbed (OHad) on indium tin oxide (ITO) in the electrodeposition of zinc oxide (ZnO) by p otential modulation method. We found that by applying an optimal constant p otential of -0.72 V, X-ray diffraction (XPD) peak intensity of crystalline phase indicating ZnO (100) and ZnO (101) deposited in oxygen containing sol ution was significantly higher than that of ZnO formed in oxygen free solut ion. ZnO was islanding on ITO substrate in an oxygen free solution, while u niform ZnO underwent bulk deposition with higher growth rate due to higher concentration of OHad resulted from dissolved oxygen. Thus, morphological i mages were in good agreement with the crystal structural analysis. In pulse d potential method, several ZnO peaks in ex situ XRD analysis were obtained on ITO substrate as optimal cathodic potential of -0.72 V for 5 s was supe rimposed on off-time of 5 s at open-circuit potential in each cycle. When r elatively shorter cathodic time of 1 s was applied, however, we did not obt ain any XRD peak of ZnO, because it might be due to the lack of the critica l concentration of OHad to form ZnO on the surface. (C) 2001 The Electroche mical Society.