Epitaxial growth of orientation-controlled KNbO3 crystal films on MgO using KTaxNb1-xO3 intermediate layer by metalorganic chemical vapor deposition (vol 78, pg 49, 2001)

Citation
A. Onoe et al., Epitaxial growth of orientation-controlled KNbO3 crystal films on MgO using KTaxNb1-xO3 intermediate layer by metalorganic chemical vapor deposition (vol 78, pg 49, 2001), APPL PHYS L, 79(8), 2001, pp. 1217-1217
Citations number
1
Language
INGLESE
art.tipo
Correction, Addition
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1217 - 1217
Database
ISI
SICI code
0003-6951(20010820)79:8<1217:EGOOKC>2.0.ZU;2-7