Near-field infrared microscopy with a transient photoinduced aperture

Citation
D. Simanovskii et al., Near-field infrared microscopy with a transient photoinduced aperture, APPL PHYS L, 79(8), 2001, pp. 1214-1216
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1214 - 1216
Database
ISI
SICI code
0003-6951(20010820)79:8<1214:NIMWAT>2.0.ZU;2-6
Abstract
We report a method of near-field infrared microscopy with a transient optic ally induced probe. Photoinduced reflectivity in semiconductors is used to generate a relatively large transient mirror with a small aperture (infrare d probe) in its center. Properties of this probe have been studied and firs t images obtained using the technique are presented. Resolution better than lambda /5 at 6.25 mum is demonstrated. Among the advantages of this techni que are high optical throughput of the probe, ease in simultaneous visible imaging, and a high scanning rate limited primarily by the pulse repetition rate of the laser system. (C) 2001 American Institute of Physics.