Quantitative carrier profiling in ion-implanted 6H-SiC

Citation
F. Giannazzo et al., Quantitative carrier profiling in ion-implanted 6H-SiC, APPL PHYS L, 79(8), 2001, pp. 1211-1213
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1211 - 1213
Database
ISI
SICI code
0003-6951(20010820)79:8<1211:QCPII6>2.0.ZU;2-D
Abstract
Dopant profiles in n-type 6H-SiC samples implanted with N+ ions have been m easured by scanning capacitance microscopy on cross-sectioned samples. The obtained carrier profiles have been accurately quantified by calculating a complete set of capacitance-to-voltage curves by simulation of the measurem ent setup, followed by the extraction of the system response characteristic as a function of the local carrier concentration. The discrepancy observed to occur between the scanning capacitance microscopy data and the correspo nding secondary ions mass spectroscopy profiles is explained by the fact th at the scanning capacitance microscopy is sensitive on the local concentrat ion of free carriers, which is on the local concentration of electrically a ctivated dopant ions. (C) 2001 American Institute of Physics.