Lithium-fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices

Citation
Fr. Zhu et al., Lithium-fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices, APPL PHYS L, 79(8), 2001, pp. 1205-1207
Citations number
24
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1205 - 1207
Database
ISI
SICI code
0003-6951(20010820)79:8<1205:LITOAF>2.0.ZU;2-W
Abstract
Phenyl-substituted polymer electroluminescent (EL) devices using an insulat ing lithium-fluoride (LiF) layer between indium tin oxide (ITO) and poly(st yrene sulfonate)-doped poly(3,4-ethylene dioxythiophene) (PEDOT) hole trans porting layer have been fabricated. By comparing the devices made without t his layer, the results demonstrate that the former has a higher EL brightne ss operated at the same current density. At a given constant current densit y of 20 mA/cm(2), the luminance and efficiency for devices with 1.5 nm LiF- coated ITO were 1600 cd/m(2) and 7 cd/A. These values were 1170 cd/m(2) and 5.7 cd/A, respectively, for the same devices made with only an ITO anode. The ultrathin LiF layer between ITO and PEDOT modifies the hole injection p roperties. A more balanced charge carrier injection due to the anode modifi cation by an ultrathin LiF layer is used to explain this enhancement. (C) 2 001 American Institute of Physics.