Charge-imaging field-effect transistor

Citation
Lh. Chen et al., Charge-imaging field-effect transistor, APPL PHYS L, 79(8), 2001, pp. 1202-1204
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1202 - 1204
Database
ISI
SICI code
0003-6951(20010820)79:8<1202:CFT>2.0.ZU;2-D
Abstract
Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/ AlGaAs heterostructure containing a near-surface two-dimensional electron g as. These FETs have quantum point contact geometries to minimize the size o f the channel and to improve the spatial resolution. The charge noise at T= 4.2 K has a 1/f behavior and reaches values <<1e/Hz(1/2) at 30 kHz. The spa tial resolution of the FET was measured at liquid He temperatures using a s canned probe microscope with a charged tip. The charge sensitivity of the F ET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy c antilever. (C) 2001 American Institute of Physics.