Double quantum dots as a high sensitive submillimeter-wave detector

Citation
O. Astafiev et al., Double quantum dots as a high sensitive submillimeter-wave detector, APPL PHYS L, 79(8), 2001, pp. 1199-1201
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1199 - 1201
Database
ISI
SICI code
0003-6951(20010820)79:8<1199:DQDAAH>2.0.ZU;2-1
Abstract
A single-electron transistor (SET) consisting of parallel double quantum do ts fabricated in a GaAs/AlxGa1-xAs heterostructure crystal is demonstrated and it serves as an extremely high sensitive detector of submillimeter wave s (SMMWs). One of the double dots is ionized by a SMMW via Kohn-mode plasma excitation, which affects the SET conductance through the other quantum do t, yielding the photoresponse. The noise equivalent power of the detector f or wavelengths of about 0.6 mm is estimated to reach the order of 10(-17) W root Hz at 70 mK. (C) 2001 American Institute of Physics.