Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

Citation
N. Shigekawa et al., Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors, APPL PHYS L, 79(8), 2001, pp. 1196-1198
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1196 - 1198
Database
ISI
SICI code
0003-6951(20010820)79:8<1196:ECOAHT>2.0.ZU;2-S
Abstract
Spectral analysis of the electroluminesence (EL) of AlGaN/GaN high-electron -mobility transistors is reported. The shape of the EL spectra is completel y different from the shape of the photoluminescence spectrum. The wavelengt h for the peak of the EL spectrum gets shorter when the gate-bias voltage i s decreased. Its intensity shows a bell shape when the gate-bias voltage is swept. These features suggest that the EL signal is due to the intraband t ransition of the channel electrons in the high-field region at the drain ed ge. (C) 2001 American Institute of Physics.