Fabrication of a nanometric Zn dot by nonresonant near-field optical chemical-vapor deposition

Citation
T. Kawazoe et al., Fabrication of a nanometric Zn dot by nonresonant near-field optical chemical-vapor deposition, APPL PHYS L, 79(8), 2001, pp. 1184-1186
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1184 - 1186
Database
ISI
SICI code
0003-6951(20010820)79:8<1184:FOANZD>2.0.ZU;2-1
Abstract
We demonstrate a technique for the deposition of nanometric Zn dots by phot odissociation of gas-phase diethylzinc using an optical near field under no nresonant conditions. The observed deposited Zn dot was less than 50 nm in size. The photodissociation mechanisms are based on the unique properties o f optical near fields, i.e., enhanced two-photon absorption, induced near-f ield transition, and a direct excitation of the vibration-dissociation mode of diethylzinc. (C) 2001 American Institute of Physics.