We demonstrate a technique for the deposition of nanometric Zn dots by phot
odissociation of gas-phase diethylzinc using an optical near field under no
nresonant conditions. The observed deposited Zn dot was less than 50 nm in
size. The photodissociation mechanisms are based on the unique properties o
f optical near fields, i.e., enhanced two-photon absorption, induced near-f
ield transition, and a direct excitation of the vibration-dissociation mode
of diethylzinc. (C) 2001 American Institute of Physics.