Single-electron charging effect in individual Si nanocrystals

Citation
T. Baron et al., Single-electron charging effect in individual Si nanocrystals, APPL PHYS L, 79(8), 2001, pp. 1175-1177
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1175 - 1177
Database
ISI
SICI code
0003-6951(20010820)79:8<1175:SCEIIS>2.0.ZU;2-9
Abstract
We present a detailed study of the electronic properties of individual sili con nanocrystals (nc-Si) elaborated by low-pressure chemical vapor depositi on on 1.2 nm thick SiO2 grown on Si (100). The combination of ultrathin oxi de layers and highly doped substrates allows the imaging of the hemispheric al dots by scanning tunneling microscopy. Spectroscopic studies of single d ots are made by recording the I(V) curves on the Si nanocrystal accurately selected by a metallic tip. These I(V) curves exhibit Coulomb blockade and resonant tunneling effects. Coulomb pseudogaps between 0.15 and 0.2 V are m easured for different dots. Capacitances between 0.2 and 1 aF and tunnel re sistances around 5x10(9) Omega are deduced from the width and height of the staircases. The charging and confinement energies deduced from the I(V) cu rves are in good agreement with a modified orthodox model which includes th e quantification of electronic levels. (C) 2001 American Institute of Physi cs.