Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method

Citation
Ks. Yoon et al., Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method, APPL PHYS L, 79(8), 2001, pp. 1160-1162
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1160 - 1162
Database
ISI
SICI code
0003-6951(20010820)79:8<1160:POCMTJ>2.0.ZU;2-R
Abstract
A two-step rf plasma oxidation technique of an insulating layer has been pe rformed to enhance electrical and structural properties of magnetic tunnel junction (MTJ) devices. Comparison was made by analyzing properties of the MTJ oxidized by conventional rf and two-step rf plasma oxidation methods. E xperimentally observed results give improved surface imaging and sufficient oxygen contents of the insulating layer under the two-step oxidation metho d. In addition, electrical breakdown voltage and magnetoresistance of the M TJ were increased from 0.7 to 1.8 V and from 4.5% to 6.8%, respectively, co rrelated with improved structural information. (C) 2001 American Institute of Physics.