Spin-valve transistor with an Fe/Au/Fe(001) base

Citation
R. Sato et K. Mizushima, Spin-valve transistor with an Fe/Au/Fe(001) base, APPL PHYS L, 79(8), 2001, pp. 1157-1159
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1157 - 1159
Database
ISI
SICI code
0003-6951(20010820)79:8<1157:STWAFB>2.0.ZU;2-M
Abstract
A spin-valve transistor with an epitaxial Fe/Au/Fe(001) base was formed on n-GaAs, the characteristics of which were examined under a magnetic field f or emitter voltages up to 3 V. The transfer ratio of the transistor, i.e., the ratio of collector-to-emitter current exceeded 10(-3) at 3 V, preservin g the magnet current ratio, i.e., the ratio of collector current in the par allel-to-antiparallel magnetic configuration well above 100%. It was sugges ted that the transfer ratio would be further enhanced by improving the flat ness of the tunnel junction for injecting electrons from the emitter into t he base, as well as by increasing the electron transmittance at the base/co llector interface. (C) 2001 American Institute of Physics.