Effective enhancement of C54TiSi(2) phase formation with multi-thermal-shock processing at 600 degrees C

Li, S Lee, YK Zhang, L Gao, W Lee, KS

S. Li et al., Effective enhancement of C54TiSi(2) phase formation with multi-thermal-shock processing at 600 degrees C, APPL PHYS L, 79(8), 2001, pp. 1139-1141

10

INGLESE

Article

Apllied Physucs/Condensed Matter/Materiales Science

APPLIED PHYSICS LETTERS

0003-6951 → ACNP

79

8

2001

1139 - 1141

ISI

0003-6951(20010820)79:8<1139:EEOCPF>2.0.ZU;2-S

Enhancing C54 TiSi2 phase formation and reducing its formation temperature are two key issues in ultralarge-scale integration semiconductor industry. This work demonstrated that the formation of C54 TiSi2 phase can be effecti vely enhanced and the processing temperature can be reduced by 150-200 degr eesC through multi-thermal-shock processing. The result shows that the resi stivity of the TiSi2 compound decreased with increasing thermal shock frequ ency and consequently reached 15.90 mu Omega cm at 600 degreesC. It is beli eved that the enhancement of C54 phase formation is due to the increase of internal energy of C49 crystals, which is caused by multi-thermal-shock pro cessing. (C) 2001 American Institute of Physics.