Effective enhancement of C54TiSi(2) phase formation with multi-thermal-shock processing at 600 degrees C

Citation
S. Li et al., Effective enhancement of C54TiSi(2) phase formation with multi-thermal-shock processing at 600 degrees C, APPL PHYS L, 79(8), 2001, pp. 1139-1141
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1139 - 1141
Database
ISI
SICI code
0003-6951(20010820)79:8<1139:EEOCPF>2.0.ZU;2-S
Abstract
Enhancing C54 TiSi2 phase formation and reducing its formation temperature are two key issues in ultralarge-scale integration semiconductor industry. This work demonstrated that the formation of C54 TiSi2 phase can be effecti vely enhanced and the processing temperature can be reduced by 150-200 degr eesC through multi-thermal-shock processing. The result shows that the resi stivity of the TiSi2 compound decreased with increasing thermal shock frequ ency and consequently reached 15.90 mu Omega cm at 600 degreesC. It is beli eved that the enhancement of C54 phase formation is due to the increase of internal energy of C49 crystals, which is caused by multi-thermal-shock pro cessing. (C) 2001 American Institute of Physics.