Enhancing C54 TiSi2 phase formation and reducing its formation temperature
are two key issues in ultralarge-scale integration semiconductor industry.
This work demonstrated that the formation of C54 TiSi2 phase can be effecti
vely enhanced and the processing temperature can be reduced by 150-200 degr
eesC through multi-thermal-shock processing. The result shows that the resi
stivity of the TiSi2 compound decreased with increasing thermal shock frequ
ency and consequently reached 15.90 mu Omega cm at 600 degreesC. It is beli
eved that the enhancement of C54 phase formation is due to the increase of
internal energy of C49 crystals, which is caused by multi-thermal-shock pro
cessing. (C) 2001 American Institute of Physics.