Long-wavelength HgCdTe negative luminescent devices

Citation
T. Ashley et al., Long-wavelength HgCdTe negative luminescent devices, APPL PHYS L, 79(8), 2001, pp. 1136-1138
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1136 - 1138
Database
ISI
SICI code
0003-6951(20010820)79:8<1136:LHNLD>2.0.ZU;2-4
Abstract
We have investigated the negative luminescent properties of a HgCdTe device , fabricated from a 1 mm diameter array of photodiodes having peak emission at a wavelength of 8.5 mum. This long-wavelength luminescence is of suffic ient efficiency and area to be useful in device applications. (C) 2001 Amer ican Institute of Physics.