Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells

Citation
Yd. Jho et al., Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells, APPL PHYS L, 79(8), 2001, pp. 1130-1132
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1130 - 1132
Database
ISI
SICI code
0003-6951(20010820)79:8<1130:MOPFAT>2.0.ZU;2-#
Abstract
We have measured both spectrum- and time-resolved photoluminescence (PL) of InGaN/GaN light-emitting diode structure as a function of an external bias . From spectrum-resolved PL, we observed regions of blueshift and redshift in peak PL energies. From the bias point at which redshift begins, which we attribute to the inversion of electric field due to full compensation of t he piezoelectric field (PEF), we estimate PEF to be 2.1+/-0.2 MV/cm. From t ime-resolved PL, we found the carrier lifetimes to drastically decrease (2. 5 ns-2 ps) with increasing reverse bias. We attribute this decrease to esca pe tunneling through tilted barriers. (C) 2001 American Institute of Physic s.