Bias stress in organic thin-film transistors and logic gates

Citation
Sj. Zilker et al., Bias stress in organic thin-film transistors and logic gates, APPL PHYS L, 79(8), 2001, pp. 1124-1126
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1124 - 1126
Database
ISI
SICI code
0003-6951(20010820)79:8<1124:BSIOTT>2.0.ZU;2-W
Abstract
Threshold voltage instabilities of all-organic thin-film transistors are in vestigated as a function of stress time and stress bias. The dominant effec t is a positive threshold shift for negative gate bias stress which is expl ained by mobile ions drifting in the insulator when a gate field is applied . Trapping of charge carriers at the semiconductor-insulator interface play s only a minor role. Furthermore, we investigate the stress behavior of a b asic logic element, an inverter. In comparison to a single transistor, we o bserve improved stability which arises from partial compensation of the par ametric shifts during operation. (C) 2001 American Institute of Physics.