Suppression of lateral fluctuations in CdSe-based quantum wells

Citation
E. Kurtz et al., Suppression of lateral fluctuations in CdSe-based quantum wells, APPL PHYS L, 79(8), 2001, pp. 1118-1120
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1118 - 1120
Database
ISI
SICI code
0003-6951(20010820)79:8<1118:SOLFIC>2.0.ZU;2-1
Abstract
We report a reduction of inhomogeneous broadening in CdSe-related quantum w ells in ZnSe by employing a growth technique that uses a CdS-compound sourc e instead of the standard Cd elemental source for molecular-beam epitaxy. A ssisted by the low sticking coefficient of sulfur and possibly an exchange reaction between S and Se, only a small S contamination is observed. A comp arison with standard layers reveals an increase in quality and homogeneity by a strong reduction of the photoluminescence (PL) linewidth. Samples obta ined by our method show extremely little lateral confinement as indicated b y a lack of sharp single dot emission lines in micro PL and the absence of the extensive redshift observed in temperature dependent PL of fluctuating well potentials. (C) 2001 American Institute of Physics.