Ultrathin PtSi layers patterned by scanned probe lithography

Citation
Es. Snow et al., Ultrathin PtSi layers patterned by scanned probe lithography, APPL PHYS L, 79(8), 2001, pp. 1109-1111
Citations number
26
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1109 - 1111
Database
ISI
SICI code
0003-6951(20010820)79:8<1109:UPLPBS>2.0.ZU;2-1
Abstract
A process for patterning ultrathin layers of PtSi with high spatial resolut ion is presented. In this process, scanned probe anodic oxidation is used t o pattern a surface oxide layer on a H-passivated Si surface. This oxide pa ttern prevents the reaction of a deposited Pt film with the underlying Si i n the formation of PtSi. The unreacted Pt on the oxide is removed by a sele ctive etch before any annealing. This process greatly reduces lateral diffu sion and produces a 2-nm-thick PtSi layer with good electrical properties t hat maintains the fidelity of the patterned oxide mask. Such nanostructured PtSi films are a good candidate for use in constructing lateral Si-based q uantum devices. (C) 2001 American Institute of Physics.