Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

Citation
Jcl. Yong et al., Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers, APPL PHYS L, 79(8), 2001, pp. 1085-1087
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1085 - 1087
Database
ISI
SICI code
0003-6951(20010820)79:8<1085:IOLNSO>2.0.ZU;2-Z
Abstract
The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quan tum well system on gain is investigated. The nitrogen is considered to be e ither fully incorporated within the lattice or to be incorporated as a loca lized acceptor. In the latter case this results in conduction-band anticros sing, causing nonparabolicity. The resulting gains from the two extreme lim its are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/Ga As quantum well lasers for 1.3 mum applications. (C) 2001 American Institut e of Physics.