Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAS(001)-(2 x 4)

Citation
Tj. Krzyzewski et al., Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAS(001)-(2 x 4), SURF SCI, 482, 2001, pp. 891-897
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
0039-6028 → ACNP
Volume
482
Year of publication
2001
Part
2
Pages
891 - 897
Database
ISI
SICI code
0039-6028(20010620)482:<891:SMARCD>2.0.ZU;2-B
Abstract
The evolution of the surface morphology and reconstruction during growth by molecular beam epitaxy of InAs on the GaAS(001)-(2 x 4) surface has been s tudied using rapid-quench scanning tunnelling microscopy. At a growth tempe rature of 500 degreesC and with an As :In flux ratio of 2:1 (growth rate 0. 068 ML s(-1)), the two-dimensional islands formed at sub-monolayer (ML) cov erages exhibit an In-terminated locally (3 x 1) reconstruction, in contrast to the (2 x 4) reconstruction of islands grown at higher flux ratios. The island size distributions exhibit scaling behaviour for all flux ratios, wh ich also matches the scaling form for GaAs homoepitaxy on the (2 x 4) surfa ce. Deposition of more than 1 ML InAs results in the formation of a disorde red and alloyed wetting layer whose characteristics are independent of the flux ratio and which exhibits a (1 x 3) reconstruction. The role of heteroe pitaxial strain in these changes is discussed. (C) 2001 Elsevier Science B. V. All rights reserved.