A low-noise, low-power CMOS SOI readout front-end for silicon detectors leakage current compensation with capability

Citation
Y. Hu et al., A low-noise, low-power CMOS SOI readout front-end for silicon detectors leakage current compensation with capability, IEEE CIRC-I, 48(8), 2001, pp. 1022-1030
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS
ISSN journal
1057-7122 → ACNP
Volume
48
Issue
8
Year of publication
2001
Pages
1022 - 1030
Database
ISI
SICI code
1057-7122(200108)48:8<1022:ALLCSR>2.0.ZU;2-#
Abstract
A low-noise, low-power CMOS semiconductor on insulator (SOI) readout front- end aiming to dc coupling to silicon radiation detectors is presented in th is paper. It is able to compensate the leakage current of detectors within a wide range up to 10 muA. While the presented solution does not significan tly deteriorate the amplifier noise performance it complies with demands fo r low-noise readout system for silicon detectors. This front-end system inc ludes a charge-sensitive amplifier, a semi-Gaussian CR-RC shaping amplifier and an output buffer. It has been simulated and implemented in a CMOS SOI- SIMOX process. For no leakage current, an input referred equivalent noise c harge (ENC) of 426 electrons (rms) for 0 pF of detector capacitance with a noise slope of 40 electrons/pF, a peaking time of 50 ns, and a conversion g ain of 23.4 mV/fC have been obtained.