Measurement of the Auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique

Citation
I. Riech et al., Measurement of the Auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique, APPL PHYS L, 79(7), 2001, pp. 964-966
Citations number
27
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
7
Year of publication
2001
Pages
964 - 966
Database
ISI
SICI code
0003-6951(20010813)79:7<964:MOTALI>2.0.ZU;2-B
Abstract
We have studied GaxIn1-xAsySb1-y/GaSb heterostructures for x=0.84 and y=0.1 4 using the photoacoustic technique with the heat transmission configuratio n. A theoretical model, which includes all the possible nonradiative recomb ination mechanisms that contribute to heat generation, was developed to cal culate the photoacoustic signal for this type of heterostructure. The Auger recombination lifetime tau (Auger) was determined by fitting our experimen tal results to the calculated frequency dependence of the theoretical photo acoustic signal. The obtained value for tau (Auger) is compatible with thos e reported in the literature for semiconductors with band-gap energies belo w and above 0.5 eV, the energy region where there is a lack of experimental tau (Auger) values. (C) 2001 American Institute of Physics.