Advantage of anti-Stokes Raman scattering for high-temperature measurements

Citation
H. Fujimori et al., Advantage of anti-Stokes Raman scattering for high-temperature measurements, APPL PHYS L, 79(7), 2001, pp. 937-939
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
7
Year of publication
2001
Pages
937 - 939
Database
ISI
SICI code
0003-6951(20010813)79:7<937:AOARSF>2.0.ZU;2-#
Abstract
We present the results of experiments that assess the viability of anti-Sto kes scattering to investigate in situ materials at high temperatures. Both anti-Stokes and Stokes Raman measurements have been performed at various hi gh temperatures using hafnia as a test material. As compared with Stokes Ra man spectra, anti-Stokes spectra were observed with lower thermal emission backgrounds in accordance with Planck's equation. The intensity ratio of an ti-Stokes to Stokes scattering approaches 1 as the temperature increases at high temperatures satisfying the Boltzmann distribution law. These results clearly demonstrate the advantage and feasibility of anti-Stokes Raman sca ttering for the elimination of the thermal emission in comparison with Stok es scattering. (C) 2001 American Institute of Physics.