Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation

Citation
J. Jasinski et al., Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation, APPL PHYS L, 79(7), 2001, pp. 931-933
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
7
Year of publication
2001
Pages
931 - 933
Database
ISI
SICI code
0003-6951(20010813)79:7<931:IOMOEP>2.0.ZU;2-F
Abstract
Structural studies of GaAs implanted with N or coimplanted with other eleme nts showed that, in addition to typical postimplant defects, small voids we re present in the implanted region in such materials. Comparison of the mic rostructure found in these layers with electrical results indicates that th ese voids are responsible for the low activation efficiency of N implanted into GaAs. The results show that the N-induced enhancement of the donor act ivation efficiency can be achieved only in a void-free region of the implan ted sample. (C) 2001 American Institute of Physics.