Observations of Al segregation around dislocations in AlGaN

Citation
L. Chang et al., Observations of Al segregation around dislocations in AlGaN, APPL PHYS L, 79(7), 2001, pp. 928-930
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
7
Year of publication
2001
Pages
928 - 930
Database
ISI
SICI code
0003-6951(20010813)79:7<928:OOASAD>2.0.ZU;2-8
Abstract
Transmission electron microscopy has been used to observe Al segregation ar ound the threading dislocations in Al0.1Ga0.9N and Al0.3Ga0.7N grown by met alorganic chemical vapor deposition on 6H-SiC. Dislocation lines were found to have up to 70% more Al concentration than those regions free of disloca tions in the matrix. The Al-depleted regions around the dislocations are sh own to be within a few nanometers from the dislocation lines. The results a lso show that more Al segregate to edge dislocations than to screw ones. (C ) 2001 American Institute of Physics.