Pulsed atomic layer epitaxy of quaternary AlInGaN layers

Citation
J. Zhang et al., Pulsed atomic layer epitaxy of quaternary AlInGaN layers, APPL PHYS L, 79(7), 2001, pp. 925-927
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
7
Year of publication
2001
Pages
925 - 927
Database
ISI
SICI code
0003-6951(20010813)79:7<925:PALEOQ>2.0.ZU;2-U
Abstract
In this letter, we report on a material deposition scheme for quaternary Al xInyGa1-x-yN layers using a pulsed atomic layer epitaxy (PALE) technique. T he PALE approach allows accurate control of the quaternary layer compositio n and thickness by simply changing the number of aluminum, indium, and gall ium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temp erature photoluminescence peaks at 280 nm can easily be grown even at tempe ratures lower than 800 degreesC. (C) 2001 American Institute of Physics.