All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion

Citation
La. Eyres et al., All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion, APPL PHYS L, 79(7), 2001, pp. 904-906
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
7
Year of publication
2001
Pages
904 - 906
Database
ISI
SICI code
0003-6951(20010813)79:7<904:AFOTOG>2.0.ZU;2-J
Abstract
Orientation-patterned GaAs (OPGaAs) films of 200 mum thickness have been gr own by hydride vapor phase epitaxy (HVPE) on an orientation-patterned templ ate fabricated by molecular beam epitaxy (MBE). Fabrication of the template s utilized only MBE and chemical etching, taking advantage of GaAs/Ge/GaAs heteroepitaxy to control the crystal orientation of the top GaAs film relat ive to the substrate. Antiphase domain boundaries were observed to propagat e vertically under HVPE growth conditions so that the domain duty cycle was preserved through the thick GaAs for all domain periods attempted. Quasiph ase-matched frequency doubling of a CO2 laser was demonstrated with the bea m confocally focused through a 4.6 mm long OPGaAs film. (C) 2001 American I nstitute of Physics.