Morphological and electrical properties of indium tin oxide films preparedat a low processing temperature for flexible organic light-emitting devices

Citation
Fr. Zhu et al., Morphological and electrical properties of indium tin oxide films preparedat a low processing temperature for flexible organic light-emitting devices, MAT SCI E B, 85(2-3), 2001, pp. 114-117
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
85
Issue
2-3
Year of publication
2001
Pages
114 - 117
Database
ISI
SICI code
0921-5107(20010822)85:2-3<114:MAEPOI>2.0.ZU;2-B
Abstract
In this work, we report the results of an effort to prepare high-quality in dium tin oxide (ITO) thin films at a low temperature for flexible organic l ight-emitting devices (OLED). The ITO films were deposited on 50 mum thin g lass sheets (Schott D263 borosilicate glass) using an argon-hydrogen mixtur e by radio frequency magnetron sputtering. The results show that the conduc tion mechanism of the films is mainly governed by the scattering of the ele ctrons due to an increased oxygen vacancy and associated ionized impurity s cattering centers in the films. At the optimal deposition condition, the IT O thin films with a root-mean-square roughness of 1.13 nm over an area of 3 00 nm x 300 nm, an optical transmission of over 86% in the visible spectrum , and a resistivity of 4.66 x 10(-4) Omega cm were achieved. The films were used to fabricate phenyl alkoxyphenyl PPV copolymer-based OLED. A maximum luminance of 4.8 x 10(4) cd m(-2) and an efficiency of 5.8 cd A(-1) at an o perating voltage of 7.5 V for the flexible OLEDs were obtained. The electro luminescence performance of the flexible devices is comparable to the ident ical devices made using the commercial ITO-coated rigid glass substrates. ( C) 2001 Elsevier Science BN. All rights reserved.