The application of in situ monitor of extremely rarefied particle clouds grown thermally above wafers by using laser light scattering method to the development of the mass-production condition of the tungsten thermal chemical vapor deposition
N. Ito et al., The application of in situ monitor of extremely rarefied particle clouds grown thermally above wafers by using laser light scattering method to the development of the mass-production condition of the tungsten thermal chemical vapor deposition, J VAC SCI A, 19(4), 2001, pp. 1248-1254
It has been successfully demonstrated that the scattered-light intensity of
thermally grown particle clouds consisting of particles of less than 20 nm
in size above wafers in a real tungsten (W) chemical vapor deposition (CVD
) chamber correlate well with both the surface roughness of the W-CVD film
measured by atomic force microscopy and with the gas-flow ratio SiH4/WF6. I
n addition. we can observe the appearance and motion of particle clouds cor
responding to the transient variation of the ratio SiH4/WF6 at the conversi
on of gases and at the change of the flow ratio. These features of our in s
itu particle monitor enable us to achieve the mass-production conditions fo
r particle-free and smooth surfaces of W films with short cycle time. Moreo
ver, our particle monitor is sensitive enough to adopt in the development o
f process conditions as the reduction of design rules for large-scale integ
rated circuit proceeds. Therefore, applying our in situ particle monitor ab
ove wafers for developing mass-production conditions is a notable method to
minimize the monitor wafers and to realize short cycle time. (C) 2001 Amer
ican Vacuum Society.