Study of ZrO2 thin films for gate oxide applications

Citation
Sw. Nam et al., Study of ZrO2 thin films for gate oxide applications, J VAC SCI A, 19(4), 2001, pp. 1720-1724
Citations number
28
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
0734-2101 → ACNP
Volume
19
Issue
4
Year of publication
2001
Part
2
Pages
1720 - 1724
Database
ISI
SICI code
0734-2101(200107/08)19:4<1720:SOZTFF>2.0.ZU;2-I
Abstract
We investigated the microstructures and electrical properties of ZrO2 films deposited by reactive dc magnetron sputtering on Si substrates for gate di electrics applications. We observed that the refractive index value of the ZrO2 films increased with an increase in deposition powers and annealing te mperatures. The ZrO2 films deposited at elevated temperatures are polycryst alline, and both the monoclinic and tetragonal phases exist in the films. F ilms with higher density and improved crystallinity are obtained at higher deposition temperatures. The interfacial oxide layer between ZrO2 films and Si substrates grew upon annealing in the O-2 gas ambient, which is due to the oxidation of Si substrates by the diffusion of oxidizing species from O -2 gas ambient. The accumulation capacitance value increased upon annealing in the N-2 gas ambient due to the densification of the films, while it dec reased in O-2 gas ambient due to the growth of the interfacial oxide layer. (C) 2001 American Vacuum Society.