Investigations on InN whiskers grown by chemical vapour deposition

Citation
H. Parala et al., Investigations on InN whiskers grown by chemical vapour deposition, J CRYST GR, 231(1-2), 2001, pp. 68-74
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
231
Issue
1-2
Year of publication
2001
Pages
68 - 74
Database
ISI
SICI code
0022-0248(200109)231:1-2<68:IOIWGB>2.0.ZU;2-X
Abstract
Nanostructures of compound semiconductors of group-III nitrides are ideal b uilding blocks for nanoscale optoelectronic devices. InN has a low decompos ition temperature and the growth of nanoscale crystalline InN material at l ow temperatures is difficult. One of the approaches is to design single mol ecule precursors that decompose at low temperatures. Single molecule precur sors of the type N3In[(CH2)(3)NMe2](2) were developed and the growth of den se crystalline InN layers with preferred orientation was achieved using thi s compound. However, employing specific CVD process parameters we were able to grow InN whiskers consistently by CVD using a cold wall CVD reactor on bare sapphire substrates at a growth temperature of 500 degreesC. These whi skers were characterised by XRD, SEM, EDX, XPS, RBS, TEM and SAED measureme nts. (C) 2001 Elsevier Science B.V. All rights reserved.