Frequency-temperature scaling of the CV characteristics for irradiated Si detectors

Citation
D. Campbell et al., Frequency-temperature scaling of the CV characteristics for irradiated Si detectors, NUCL INST A, 466(3), 2001, pp. 456-463
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
466
Issue
3
Year of publication
2001
Pages
456 - 463
Database
ISI
SICI code
0168-9002(20010711)466:3<456:FSOTCC>2.0.ZU;2-Q
Abstract
The dependence of the CV characteristics on temperature and measurement fre quency, f, for heavily irradiated silicon detectors is found to be reducibl e to a single dimensionless variable f tau, where tau is the dielectric rel axation time (which is strongly dependent on temperature) of the Si bulk. S uch scaling behaviour can be understood within a simple model which is know n to work well for non-irradiated detectors. This model also explains quali tatively the shape of the CV characteristics for the heavily irradiated det ectors but fails to describe them quantitatively. (C) 2001 Elsevier Science B.V. All rights reserved.