Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots

Citation
Yt. Moon et al., Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots, APPL PHYS L, 79(5), 2001, pp. 599-601
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
5
Year of publication
2001
Pages
599 - 601
Database
ISI
SICI code
0003-6951(20010730)79:5<599:TDOPOI>2.0.ZU;2-X
Abstract
The temperature dependence of the photoluminescence (PL) of InGaN films, gr own by metalorganic chemical vapor deposition, has been investigated. A str ained InGaN thin film which contains composition-fluctuated regions shows t he so-called S-shaped temperature dependence of the dominant PL peak energy . However, an InGaN thick film which contains quantum dot-like In-rich regi ons shows a sigmoidal temperature dependence of the dominant PL peak energy , as the result of a transfer of carriers from the band-edge related lumine scent centers to quantum dot-like In-rich regions. It is also found that th e activation energy for the thermal quenching of PL intensity in the InGaN thick film which contains quantum dot-like In-rich regions is larger than t hat in the strained InGaN thin film which contains composition-fluctuated r egions. (C) 2001 American Institute of Physics.