Modelling of transport phenomena and defects in crystal growth precesses

Citation
S. Pendurti et al., Modelling of transport phenomena and defects in crystal growth precesses, SADHANA, 26, 2001, pp. 71-101
Citations number
59
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Engineering Management /General
Journal title
SADHANA-ACADEMY PROCEEDINGS IN ENGINEERING SCIENCES
ISSN journal
0256-2499 → ACNP
Volume
26
Year of publication
2001
Part
1-2
Pages
71 - 101
Database
ISI
SICI code
0256-2499(200102/04)26:<71:MOTPAD>2.0.ZU;2-O
Abstract
A brief review of single crystal growth techniques and the associated probl ems is presented. Emphasis is placed on models for various transport and de fect phenomena involved in the growth process with the ultimate aim of inte grating them into a comprehensive numerical model. The sources of dislocati on nucleation in the growing crystal are discussed, and the propagation and multiplication of these under the action of thermal stresses is discussed. A brief description of a high-level numerical technique based on multiple adaptive grid generation and finite volume discretization is presented, fol lowed by the result of a representative numerical simulation.