A brief review of single crystal growth techniques and the associated probl
ems is presented. Emphasis is placed on models for various transport and de
fect phenomena involved in the growth process with the ultimate aim of inte
grating them into a comprehensive numerical model. The sources of dislocati
on nucleation in the growing crystal are discussed, and the propagation and
multiplication of these under the action of thermal stresses is discussed.
A brief description of a high-level numerical technique based on multiple
adaptive grid generation and finite volume discretization is presented, fol
lowed by the result of a representative numerical simulation.