Characteristics of irradiated silicon microstrip detectors with < 1 0 0 > and < 1 1 1 > substrates

Citation
T. Akimoto et al., Characteristics of irradiated silicon microstrip detectors with < 1 0 0 > and < 1 1 1 > substrates, NUCL INST A, 466(2), 2001, pp. 354-358
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
466
Issue
2
Year of publication
2001
Pages
354 - 358
Database
ISI
SICI code
0168-9002(20010701)466:2<354:COISMD>2.0.ZU;2-7
Abstract
In a program of developing radiation-hard silicon sensors for the LHC-ATLAS experiment. we have irradiated various types of silicon sensors with 12 Ge V protons at KEK. Among the other properties, we made a comparative study o f characteristics of the sensors with two wafer planes <1 1 1 > and <1 0 0 >. The studied sensors are p-on-n type, which satisfy the ATLAS-SCT specifi cations. Possible dependence on the substrate orientation could result from different dangling-bond configurations, The compared characteristics are t he charge collection efficiency, interstrip capacitance, and noise levels. The noise levels were measured with a real ATLAS-SCT electronics system. A substantial difference is observed in the interstrip capacitance at similar to 10 kHz, while the difference is small at > 1 MHz, The differences in th e charge collection efficiency and in the noise levels appear to be small. (C) 2001 Elsevier Science B.V. All rights reserved.