Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Citation
Yw. Ok et al., Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy, J ELEC MAT, 30(7), 2001, pp. 900-906
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
0361-5235 → ACNP
Volume
30
Issue
7
Year of publication
2001
Pages
900 - 906
Database
ISI
SICI code
0361-5235(200107)30:7<900:SPOGGO>2.0.ZU;2-Z
Abstract
Detailed transmission electron microscopy (TEM) and transmission electron d iffraction (TED) examination has been made of metalorganic molecular beam e pitaxial GaAsN layers grown on (001) GaAs substrates. TEM results show that lateral composition modulation occurs in the GaAs1-xNx layer (x < 6.75%). It is shown that increasing N composition and Se (dopant) concentration lea ds to poor crystallinity. It is also shown that the addition of Se increase s N composition. Atomic force microscopy (AFM) results show that the surfac es of the samples experience a morphological change from faceting to island ing, as the N composition and Se concentration increase. Based on the TEM a nd AFM results, a simple model is given to explain the formation of the lat eral composition modulation.