Coupling between adjacent crystal planes during CO+O-ad reaction on a defective Pd(100) surface

Citation
Wx. Huang et al., Coupling between adjacent crystal planes during CO+O-ad reaction on a defective Pd(100) surface, LANGMUIR, 17(12), 2001, pp. 3629-3634
Citations number
29
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
LANGMUIR
ISSN journal
0743-7463 → ACNP
Volume
17
Issue
12
Year of publication
2001
Pages
3629 - 3634
Database
ISI
SICI code
0743-7463(20010612)17:12<3629:CBACPD>2.0.ZU;2-A
Abstract
Spatially resolved photoemission electron microscopy (PEEM) was employed to investigate the adsorption, diffusion, and reactivity of oxygen on a defec tive Pd(100) surface. The defective region on Pd(100) exposed several diffe rent planes with low indexes, for example, (110) and (111) planes. Upon oxy gen adsorption, various types of oxygen species formed on each plane; which behaved with different reactivities toward CO. An obvious coupling between the Pd(110) plane and its adjacent planes was monitored by PEEM during CO + O-ad reaction and resulted in the appearance of the reaction-diffusion wa ves on the Pd(110) plane. The occurrence of reaction coupling had a great i nfluence on the catalytic kinetics of the crystal planes involved. However, during isothermal desorption of adsorbed oxygen on the planes, no coupling existed between adjacent planes, which implied that the reaction played a key role in the occurrence of coupling.