Extrinsic and intrinsic magnetoresistance contributions of CrO2 thin films

Citation
U. Rudiger et al., Extrinsic and intrinsic magnetoresistance contributions of CrO2 thin films, J APPL PHYS, 89(11), 2001, pp. 7699-7701
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
89
Issue
11
Year of publication
2001
Part
2
Pages
7699 - 7701
Database
ISI
SICI code
0021-8979(20010601)89:11<7699:EAIMCO>2.0.ZU;2-R
Abstract
The growth of (010)-oriented CrO2 thin films on Al2O3(0001) substrates lead s to a higher grain boundary density than the growth of (100)-oriented CrO2 thin films on isostructural TiO2(100) substrates. For both types of films an intrinsic linear contribution to the high field magnetoresistance (MR) d ue to spin disorder has been determined at T = 300 K. This contribution doe s not depend on the crystalline quality of the films and supports the sugge sted intrinsic double exchange mechanism for CrO2. At low temperature (T = 10 K) intergrain tunneling MR and Lorentz MR appear, which strongly depend on the crystalline properties of the CrO2 films. (C) 2001 American Institut e of Physics.