Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

Citation
S. Kreuzer et al., Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions, J APPL PHYS, 89(11), 2001, pp. 6751-6753
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
89
Issue
11
Year of publication
2001
Part
2
Pages
6751 - 6753
Database
ISI
SICI code
0021-8979(20010601)89:11<6751:FOSCGB>2.0.ZU;2-O
Abstract
A preparation method for magnetic tunnel junctions with single crystal GaAs (001) barriers is demonstrated. The method is based on an epoxy bond and st op etch technique and does not require epitaxial growth of a semiconductor on top of a metal. Stable GaAs tunnel barriers down to 6 nm in thickness we re prepared. The I-V measurements show a pronounced nonlinearity. Their var iation with temperature depends strongly on the barrier thickness which is weak for the 6 nm barriers, a clear indication for quantum mechanical tunne ling as the dominant transport channel. (C) 2001 American Institute of Phys ics.